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polyethylene (PE)
SEMI M1-1117 (technical revision)
and other methods of measuring electrostatic parameters
This Test Method can be used for silicon in which the impurity/dopant concentrations are between 0
This Test Method provides detailed procedures for characterizing silicon wafers GOI using the TDDB method
M06000 - SEMI M60 - Test Method for Time Dependent Dielectric Breakdown Characteristics of SiO2 Films for Si Wafer Evaluation Revision:SEMI M60-0306E2 - Superseded polyethylene (PE)This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 25, 2014. Available at www. semiviews. org and www. semi. org in October 2014; originally published January 2005; previously published November 2013. This Test Method details the time dependent dielectric breakdown (TDDB) gate oxide integrity (GOI) approach to silicon
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US$ 448.00