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M09400 - SEMI M94 - Specification for Silicon Carbide Engineered Substrates Revision:SEMI M94-0625 - Current The Standard is structured so

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Description

The Standard is structured so that new FGs can be added to the Standard through future balloting

SECS-IIは,半導体製造装置通信スタンダード1(SECS-I)および,他のメッセージトランスファプロトコルと両立し得るスタンダードである。メッセージトランスファプロトコルについては,§ 6に詳述されている。

The qualification processes cover:

This Specification does not cover test wafers intended for applications placing higher demands on silicon wafers

and electron beam processes

M09400 - SEMI M94 - Specification for Silicon Carbide Engineered Substrates Revision:SEMI M94-0625 - Current The Standard is structured so1 Purpose 1. 1 These specifications cover substrate requirements for silicon carbide engineered substrates including high purity silicon carbide layer of crystallographic polytype 4H used in semiconductor and electronic device manufacturing. 2 Scope 2. 1 A complete purchase specification may require the defining of additional physical, electrical, and bulk properties. These properties are listed, together with test methods suitable for determining

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