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The scope of this Document covers high purity hafnium tert-butoxide which is used in the semiconductor industry for the deposition of hafnium oxide based layers by atomic layer deposition or chemical vapor deposition
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SEMI G86 — Test Method for Measurement of Chip (Die) Strength by Mean of 3 Point Bending
SEMI M60 is GOI metrology based on time dependent dielectric breakdown (TDDB) method
SEMI E134-1105 (technical revision)
F09900 - SEMI F99 - Dimensional Specification of a Diaphragm Valve for a Metric PFA Tube StdVol-3D-IC The scope of this DocumentThis specification was technically approved by the Global Liquid Chemicals Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on March 11, 2005. It was available at www. semi. org in June 2005. NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to